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| INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor 2SB1481 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= -100V(Min) *High DC Current Gain: hFE= 2000(Min)@ (VCE= -2V, IC= -1.5A) *Low Collector Saturation Voltage: VCE(sat)= -1.5V(Max)@ (IC= -3A, IB= -6mA) *Complement to Type 2SD2241 B APPLICATIONS *High power switching applications. *Hammer drive, pulse motor drive applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage w w scs .i w VALUE -100 V -100 -5 V V -4 -6 -0.3 2 W 25 150 -55~150 A A A UNIT .cn mi e Collector Current-Continuous Collector Current-Pulse Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 TJ Tstg Junction Temperature Storage Temperature isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SB1481 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA B -1.5 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= -3A; IB= -6mA B -2.0 V A Collector Cutoff Current VCB= -100V; IE= 0 VEB= -5V; IC= 0 -2.0 Emitter Cutoff Current -2.5 mA hFE-1 DC Current Gain IC= -1.5A; VCE= -2V hFE-2 DC Current Gain VECF C-E Diode Forward Voltage Switching Times ton tstg tf Turn-on Time Storage Time ww w scs .i IF= 1A IC= -3A; VCE= -2V .cn mi e 2000 1000 0.15 0.80 0.40 2.0 V s s s IC= -3A, IB1= -IB2= -6mA, VCC -30V; RL= 10 Fall Time isc Websitewww.iscsemi.cn 2 |
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